发明授权
US06632691B1 Apparatus and method for determining doping concentration of a semiconductor wafer 失效
用于确定半导体晶片的掺杂浓度的装置和方法

  • 专利标题: Apparatus and method for determining doping concentration of a semiconductor wafer
  • 专利标题(中): 用于确定半导体晶片的掺杂浓度的装置和方法
  • 申请号: US10120734
    申请日: 2002-04-11
  • 公开(公告)号: US06632691B1
    公开(公告)日: 2003-10-14
  • 发明人: William H. Howland
  • 申请人: William H. Howland
  • 主分类号: G01R3126
  • IPC分类号: G01R3126
Apparatus and method for determining doping concentration of a semiconductor wafer
摘要:
An apparatus for measuring at least one electrical property of a semiconductor wafer includes a probe including a shaft having at a distal end thereof a conductive tip for electrically communicating with an object area of the semiconductor wafer. The apparatus further includes a device for applying an electrical stimulus between the conductive tip and the object area, and a device for measuring a response of the semiconductor wafer to the electrical stimulus and for determining from the response the at least one electrical property of the object area of the semiconductor wafer. A probe guard is included and surrounds the shaft of the probe adjacent the distal end of the probe. The probe guard also insulates the conductive tip from the semiconductor wafer.
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