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US06633466B2 MR thin film head with longitudinal-biasing multi-layers of antiferromagnetically-coupled high and low coercivity layers 有权
MR薄膜头，具有纵向偏置多层反铁磁耦合的高低矫顽力层

  • 专利标题： MR thin film head with longitudinal-biasing multi-layers of antiferromagnetically-coupled high and low coercivity layers
  • 专利标题（中）： MR薄膜头，具有纵向偏置多层反铁磁耦合的高低矫顽力层
  • 申请号： US09737091
    申请日： 2000-12-14
  • 公开(公告)号： US06633466B2
    公开(公告)日： 2003-10-14
  • 发明人: Masaya Sakaguci , Toshio Fukazawa
  • 申请人： Masaya Sakaguci , Toshio Fukazawa
  • 优先权： JP11-354299 19991214
  • 主分类号： G11B539
  • IPC分类号： G11B539
MR thin film head with longitudinal-biasing multi-layers of antiferromagnetically-coupled high and low coercivity layers
摘要：
A thin film head includes a GMR element formed of an antiferromagnetic layer, a pinning layer, a nonmagnetic conductive layer, a free magnetic layer, and a pair of the right and the left laminated longitudinal biasing layers. Each of the biasing layers contains a high coercivity ferromagnetic layer, a nonmagnetic layer and a low coercivity ferromagnetic layer provided on the free magnetic layer of the GMR element. The high coercivity ferromagnetic layer and low coercivity ferromagnetic layer are antiferromagnetically exchange-coupled via the nonmagnetic layer, and the high coercivity ferromagnetic layer and free magnetic layer located next to the high coercivity ferromagnetic layer are ferromagnetically coupled.
摘要（中）：

薄膜头包括由反铁磁层，钉扎层，非磁性导电层，自由磁性层和一对左右层叠纵向偏置层形成的GMR元件。 每个偏置层包含设置在GMR元件的自由磁性层上的高矫顽力铁磁层，非磁性层和低矫顽力铁磁层。 高矫顽力铁磁层和低矫顽力铁磁层通过非磁性层进行反铁磁交换耦合，位于高矫顽力铁磁层旁边的高矫顽力铁磁层和自由磁层被铁磁耦合。

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