发明授权
- 专利标题： Semiconductor device having element isolation structure
- 专利标题（中）： 具有元件隔离结构的半导体器件
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申请号： US09580953申请日： 2000-05-30
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公开(公告)号： US06635945B1公开(公告)日： 2003-10-21
- 发明人: Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Kozo Watanabe , Kenji Kanamitsu
- 申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida , Norio Suzuki , Kozo Watanabe , Kenji Kanamitsu
- 优先权： JP11-153610 19990601
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
A semiconductor device and process of forming the device are described. The process includes forming a pad oxide film on the circuit-forming side of a semiconductor substrate; forming an oxidation prevention film on the pad oxide film; removing the oxidation prevention film and the pad oxide film at a desired position, thereby exposing the surface of the semiconductor substrate; horizontally recessing the pad oxide film; etching the exposed surface of the semiconductor substrate by isotropic etching; forming a trench to a desired depth, using the oxidation prevention film as a mask; horizontally recessing the pad oxide film; and oxidizing the trench formed in the semiconductor substrate. The produced device has round upper trench edges obtained by conducting isotropic etching of the exposed surface of the semiconductor substrate and horizontally recessing of the pad oxide film before the oxidation of the trench, whereby only one oxidation step is required.
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