Invention Grant
US06638823B2 Ultra small size vertical MOSFET device and method for the manufacture thereof
失效
超小尺寸垂直MOSFET器件及其制造方法
- Patent Title: Ultra small size vertical MOSFET device and method for the manufacture thereof
- Patent Title (中): 超小尺寸垂直MOSFET器件及其制造方法
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Application No.: US09975963Application Date: 2001-10-15
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Publication No.: US06638823B2Publication Date: 2003-10-28
- Inventor: Wonju Cho , Seong Jae Lee , Kyoung Wan Park
- Applicant: Wonju Cho , Seong Jae Lee , Kyoung Wan Park
- Priority: KR2001-0016190 20010328
- Main IPC: H01L218242
- IPC: H01L218242

Abstract:
The present invention relates to an ultra small size vertical MOSFET device having a vertical channel and a source/drain structure and a method for the manufacture thereof by using a silicon on insulator (SOI) substrate. To begin with, a first silicon conductive layer is formed by doping an impurity of a high concentration into a first single crystal silicon layer. Thereafter, a second single crystal silicon layer with the impurity of a low concentration and a second silicon conductive layer with the impurity of the high concentration are formed on the first silicon conductive layer. The second single crystal silicon layer and the second silicon conductive layer are vertically patterned into a predetermined configuration. Subsequently, a gate insulating layer is formed on entire surface. Then, an annealing process is carried out to diffuse the impurities in the first silicon conductive layer and the second silicon conductive layer into the second single crystal layer, thereby forming a source region, a drain region and a vertical channel. Finally, a gate electrode is formed on side walls of the vertical channel.
Public/Granted literature
- US20020140032A1 Ultra small size vertical MOSFET device and method for the manufacture thereof Public/Granted day:2002-10-03
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