Invention Grant
- Patent Title: Semiconductor device and method of manufacturing it
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US09789163Application Date: 2001-02-20
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Publication No.: US06638827B2Publication Date: 2003-10-28
- Inventor: Shuichi Kikuchi , Eiji Nishibe
- Applicant: Shuichi Kikuchi , Eiji Nishibe
- Priority: JPP.2000-125379 20000426; JPP.2000-356043 20001122
- Main IPC: H01L21336
- IPC: H01L21336

Abstract:
To enable the reduction of ON-state resistance in a state in which the withstand voltage is secured, a semiconductor device according to the invention is provided with a gate electrode formed so that the gate electrode ranges from a gate oxide film formed on an N-type well region formed in a P-type semiconductor substrate to a selective oxide film, a P-type source region formed so that the source region is adjacent to the gate electrode, a P-type drain region formed in a position apart from the gate electrode and a P-type drift region (an LP layer) formed so that the drift region surrounds the drain region, and is characterized in that a P-type impurities layer (an FP layer) is formed so that the impurities layer is adjacent to the drain region.
Public/Granted literature
- US20010036694A1 Semiconductor device and method of manufacturing it Public/Granted day:2001-11-01
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