Invention Grant
US06638827B2 Semiconductor device and method of manufacturing it 有权
半导体装置及其制造方法

  • Patent Title: Semiconductor device and method of manufacturing it
  • Patent Title (中): 半导体装置及其制造方法
  • Application No.: US09789163
    Application Date: 2001-02-20
  • Publication No.: US06638827B2
    Publication Date: 2003-10-28
  • Inventor: Shuichi KikuchiEiji Nishibe
  • Applicant: Shuichi KikuchiEiji Nishibe
  • Priority: JPP.2000-125379 20000426; JPP.2000-356043 20001122
  • Main IPC: H01L21336
  • IPC: H01L21336
Semiconductor device and method of manufacturing it
Abstract:
To enable the reduction of ON-state resistance in a state in which the withstand voltage is secured, a semiconductor device according to the invention is provided with a gate electrode formed so that the gate electrode ranges from a gate oxide film formed on an N-type well region formed in a P-type semiconductor substrate to a selective oxide film, a P-type source region formed so that the source region is adjacent to the gate electrode, a P-type drain region formed in a position apart from the gate electrode and a P-type drift region (an LP layer) formed so that the drift region surrounds the drain region, and is characterized in that a P-type impurities layer (an FP layer) is formed so that the impurities layer is adjacent to the drain region.
Public/Granted literature
Information query
Patent Agency Ranking
0/0