- 专利标题： Method and circuit for dynamic reading of a memory cell at low supply voltage and with low output dynamics
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申请号： US10076023申请日： 2002-02-13
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公开(公告)号： US06639833B2公开(公告)日： 2003-10-28
- 发明人: Giovanni Campardo , Rino Micheloni
- 申请人： Giovanni Campardo , Rino Micheloni
- 优先权： EP01830097 20010214
- 主分类号： G11C1600
- IPC分类号： G11C1600
摘要：
The method for reading a memory cell includes supplying the cell with a first charge quantity through a capacitive integration element and reintegrating the first charge quantity through a plurality of second charge quantities supplied alternately and in succession to the capacitive integration element. In a first embodiment, the second charge quantities are initially stored in a plurality of capacitive charge-regeneration elements connected alternately and in succession to the capacitive integration element; the second charge quantities are then shared between the capacitive integration element and the capacitive charge-regeneration elements.
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