发明授权
- 专利标题： Method for making element
- 专利标题（中）： 元素的制作方法
-
申请号： US09427743申请日： 1999-10-27
-
公开(公告)号： US06641985B2公开(公告)日： 2003-11-04
- 发明人: Yasuyuki Unno , Ichiro Tanaka
- 申请人： Yasuyuki Unno , Ichiro Tanaka
- 优先权： JP10-324524 19981029; JP11-301709 19991022
- 主分类号： G03C500
- IPC分类号： G03C500
摘要：
A SiO2 thin film is formed on a SiO2 substrate provided with a binary-type diffractive element by a radiofrequency sputtering process so as to cover the fine irregularities formed on the substrate caused by misalignment of masks in the production process. This film planarizes the surface having the fine irregularities and thus prevents a decrease in diffraction efficiency.
公开/授权文献
- US20030064295A1 METHOD FOR MAKING ELEMENT 公开/授权日：2003-04-03