- 专利标题： Fabrication processes for semiconductor non-volatile memory device
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申请号： US10273925申请日： 2002-10-18
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公开(公告)号： US06642108B2公开(公告)日： 2003-11-04
- 发明人: Thomas Skotnicki , Didier Dutartre , Pascal Ribot , Maryse Paoli , Richard Fournel
- 申请人： Thomas Skotnicki , Didier Dutartre , Pascal Ribot , Maryse Paoli , Richard Fournel
- 优先权： FR0003983 20000329
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.