- 专利标题： Miniaturized capacitor with solid-state dielectric, in particular for integrated semiconductor memories, E.G. DRAMS, and method for fabricating such a capacitor
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申请号： US09935624申请日： 2001-08-23
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公开(公告)号： US06642565B2公开(公告)日： 2003-11-04
- 发明人: Emmerich Bertagnolli , Till Schlösser , Josef Willer
- 申请人： Emmerich Bertagnolli , Till Schlösser , Josef Willer
- 优先权： DE19907760 19990223
- 主分类号： H01L27108
- IPC分类号： H01L27108
摘要：
A dynamic random access memory capacitor and to a method for producing the same are described. A first (bottom) electrode of the capacitor has a grained surface made of tungsten silicide placed on a tungsten silicide layer which is disposed near a surface of a electrode body. The graining of the tungsten silicide layer is formed by tempering a temporarily present double layer that is formed of an understoichiometric tungsten silicide layer and a silicon layer. The double layer is formed on the tungsten silicide layer.
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