A method of erasing a flash memory integrated in a chip of semiconductor material and including at least one matrix of cells with a plurality of rows and a plurality of columns made in at least one insulated body, the cells of each row being connected to a corresponding word line; the method includes the step of applying a single erasing pulse relative to a selected single one of the at least one body to a selected subset of the word lines for erasing the cells of each corresponding row made in the selected body with no intermediate check of the completion of the erasure.