发明授权
US06645842B2 Semiconductor integrated circuit device, semiconductor integrated circuit wiring method, and cell arranging method
失效
半导体集成电路器件,半导体集成电路布线方法和电池布置方法
- 专利标题: Semiconductor integrated circuit device, semiconductor integrated circuit wiring method, and cell arranging method
- 专利标题(中): 半导体集成电路器件,半导体集成电路布线方法和电池布置方法
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申请号: US10196928申请日: 2002-07-18
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公开(公告)号: US06645842B2公开(公告)日: 2003-11-11
- 发明人: Mutsunori Igarashi , Takashi Mitsuhashi , Masami Murakata , Masaaki Yamada , Fumihiro Minami , Toshihiro Akiyama , Takahiro Aoki
- 申请人: Mutsunori Igarashi , Takashi Mitsuhashi , Masami Murakata , Masaaki Yamada , Fumihiro Minami , Toshihiro Akiyama , Takahiro Aoki
- 优先权: JP10-176285 19980623
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
There are disclosed a semiconductor integrated circuit device, a semiconductor integrated circuit wiring method and a cell arranging method, which can reduce delay in a semiconductor integrated circuit and improve noise resistibility, achieve facility of wiring design, and reduce production cost. The present invention forms an X-Y reference wiring grid using wirings of a total of M (M≧2) layers in which an n-th (n≧2) layer wiring intersects orthogonally with a (n−1)-th layer wiring, and forms an oblique wiring grid which intersects with the reference wiring layer to have an angle of 45 degree or 135 degree is formed by a (m+1)-th layer wiring and a (m+2)-th layer wiring which are intersected orthogonally with each other, such that the (m+1)-th layer wiring and (m+2)-th layer wiring in the oblique wiring grid has a wiring pitch of {square root over ( )}2 times of that of wiring in the reference wiring grid, and also wiring widths of {square root over ( )}2 times of that of wiring in the reference wiring layer.
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