Invention Grant
- Patent Title: Apparatus for forming coaxial silicon interconnects
- Patent Title (中): 用于形成同轴硅互连的装置
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Application No.: US10219842Application Date: 2002-08-14
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Publication No.: US06646458B2Publication Date: 2003-11-11
- Inventor: Salman Akram , David R. Hembree , Alan G. Wood
- Applicant: Salman Akram , David R. Hembree , Alan G. Wood
- Main IPC: G01R3102
- IPC: G01R3102

Abstract:
An interconnect apparatus for testing bare semiconductor dice comprises raised contact members on a semiconductive substrate. The contact members are covered with an insulation layer and a conductive cap connected by a conductive trace to a testing circuit. The trace is covered with coaxial layers of a silicon-containing insulation and a metal for shielding the trace from “crosstalk” and other interference. An apparatus for simultaneous testing of multiple dies on a wafer has thermal expansion characteristics matching those of the semiconductor die or wafer and provides clean signals.
Public/Granted literature
- US20030001603A1 Method for forming coaxial silicon interconnects Public/Granted day:2003-01-02
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