Invention Grant
- Patent Title: Copper metal structure for the reduction of intra-metal capacitance
- Patent Title (中): 铜金属结构用于降低金属间电容
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Application No.: US09859353Application Date: 2001-05-18
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Publication No.: US06649517B2Publication Date: 2003-11-18
- Inventor: Young-Way Teh , Victor Seng Keong Lim , Ting Cheong Ang
- Applicant: Young-Way Teh , Victor Seng Keong Lim , Ting Cheong Ang
- Main IPC: H01L214763
- IPC: H01L214763
Abstract:
A new method and structure is provided for the creation of interconnect lines. The cross section of the interconnect lines of the invention, taken in a plane that is perpendicular to the longitudinal direction of the interconnect lines, is a triangle as opposed to the conventional square or rectangular cross section of interconnect lines.
Public/Granted literature
- US20020175414A1 Novel copper metal structure for the reduction of intra-metal capacitance Public/Granted day:2002-11-28
Information query
