发明授权
- 专利标题： Copper metal structure for the reduction of intra-metal capacitance
- 专利标题（中）： 铜金属结构用于降低金属间电容
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申请号： US09859353申请日： 2001-05-18
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公开(公告)号： US06649517B2公开(公告)日： 2003-11-18
- 发明人: Young-Way Teh , Victor Seng Keong Lim , Ting Cheong Ang
- 申请人： Young-Way Teh , Victor Seng Keong Lim , Ting Cheong Ang
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A new method and structure is provided for the creation of interconnect lines. The cross section of the interconnect lines of the invention, taken in a plane that is perpendicular to the longitudinal direction of the interconnect lines, is a triangle as opposed to the conventional square or rectangular cross section of interconnect lines.
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