发明授权
US06653185B2 Method of providing trench walls by using two-step etching processes
有权
通过使用两步蚀刻工艺提供沟槽壁的方法
- 专利标题： Method of providing trench walls by using two-step etching processes
- 专利标题（中）： 通过使用两步蚀刻工艺提供沟槽壁的方法
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申请号： US10103009申请日： 2002-03-21
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公开(公告)号： US06653185B2公开(公告)日： 2003-11-25
- 发明人: Martin Gutsche , Harald Seidl
- 申请人： Martin Gutsche , Harald Seidl
- 优先权： DE10114956 20010327
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
Method of providing trench walls of a uniform orientation to support epitaxial growth in the trench. The trench is formed by a first etching process. A second etching process is used to change crystal orientation and thus create a widened trench with modified trench walls having a predetermined crystal orientation
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