- 专利标题: Plasma enhanced chemical deposition with low vapor pressure compounds
-
申请号: US09811874申请日: 2001-03-19
-
公开(公告)号: US06656537B2公开(公告)日: 2003-12-02
- 发明人: John D. Affinito , Gordon L. Graff , Peter M. Martin , Mark E. Gross , Eric Mast , Michael G. Hall
- 申请人: John D. Affinito , Gordon L. Graff , Peter M. Martin , Mark E. Gross , Eric Mast , Michael G. Hall
- 主分类号: C23C1650
- IPC分类号: C23C1650
摘要:
A method for plasma enhanced chemical vapor deposition of low vapor monomeric materials. The method includes flash evaporating a polymer precursor forming an evaporate, passing the evaporate to a glow discharge electrode creating a glow discharge polymer precursor plasma from the evaporate, and cryocondensing the glow discharge polymer precursor on a substrate as a cryocondensed polymer precursor layer, and crosslinking the cryocondensed polymer precursor layer thereon, the crosslinking resulting from radicals created in the glow discharge polymer precursor plasma.
公开/授权文献
信息查询