发明授权
US06656809B2 Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics
失效
制造具有受控电流增益和改进的击穿电压特性的SiGe HBT的方法
- 专利标题： Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics
- 专利标题（中）： 制造具有受控电流增益和改进的击穿电压特性的SiGe HBT的方法
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申请号： US10047975申请日： 2002-01-15
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公开(公告)号： US06656809B2公开(公告)日： 2003-12-02
- 发明人: David R. Greenberg , Basanth Jagannathan , Shwu-Jen Jeng , Joseph T. Kocis , Samuel C. Ramac , David M. Rockwell
- 申请人： David R. Greenberg , Basanth Jagannathan , Shwu-Jen Jeng , Joseph T. Kocis , Samuel C. Ramac , David M. Rockwell
- 主分类号： G01R3126
- IPC分类号： G01R3126
摘要：
A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-situ P-doped emitter layer atop a patterned SiGe base structure. The in-situ P-doped emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon. The SiGe HBT structure including the above mentioned bilayer emitter is also described herein.