A photolithography apparatus has an exposure light source for emitting exposure light with a wavelength of 400 nm or less, a reticle with a pattern original image formed therein, an illumination optical system for illuminating the reticle with exposure light, a projection optical system for projecting the pattern image from the reticle onto a photosensitive plate and an alignment system for aligning the reticle and the photosensitive plate. At least some of the synthetic silica glass members composing the illumination optical system, the projection optical system and the reticle consist of synthetic silica glass members which, upon 1×104 pulse irradiation with an ArF excimer laser at an energy density from 0.1 &mgr;J/cm2·p to 200 mJ/cm2·p, have a loss factor no greater than 0.0050 cm−1 at 193.4 nm measured after irradiation, a hydrogen molecule concentration from 1×1016 molecules/cm3 to 2×1018 molecules/cm3 and a loss factor no greater than 0.0020 cm−1 before ultraviolet irradiation.