发明授权
- 专利标题: Semiconductor device with MIM capacitance element
- 专利标题(中): 具有MIM电容元件的半导体器件
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申请号: US09986578申请日: 2001-11-09
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公开(公告)号: US06657247B2公开(公告)日: 2003-12-02
- 发明人: Kenji Yoshiyama , Kiyoaki Morita
- 申请人: Kenji Yoshiyama , Kiyoaki Morita
- 优先权: JP2001-162122 20010530
- 主分类号: H01L27108
- IPC分类号: H01L27108
摘要:
A lower metal layer is provided on a lower interlayer insulating film in an MIM capacitance element forming region. The lower metal layer is formed by the same step as that in which the lower interconnection layer is formed. A dielectric layer and an upper metal layer patterned using the same mask are provided on the lower metal layer. The upper metal layer is formed to have a thickness that is thinner than the thickness of the lower metal layer. Thus, it becomes possible to achieve high reliability (lifetime) of the MIM capacitance element by improving the structure of the MIM capacitance element as well as the manufacturing steps.