发明授权
- 专利标题: Multiple redundant through hole electrical interconnects and method for forming the same
- 专利标题(中): 多重冗余通孔电气互连及其形成方法
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申请号: US09932123申请日: 2001-08-16
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公开(公告)号: US06659592B2公开(公告)日: 2003-12-09
- 发明人: Hubert Allen Vander Plas , Barry Craig Snyder , Ron Allen Hellekson , Alfred I-Tsung Pan
- 申请人: Hubert Allen Vander Plas , Barry Craig Snyder , Ron Allen Hellekson , Alfred I-Tsung Pan
- 主分类号: B41J201
- IPC分类号: B41J201
摘要:
An apparatus incorporating multiple electrical interconnects extending through a substrate (e.g., a silicon wafer), and a method of forming the same. The electrical interconnects convey electrical signals through the substrate to structures mounted on the front side of the substrate. A conductive layer can be used to selectively distribute the electrical signals to the structures. Accordingly, it is not necessary to route electrical signals to the front side of the substrate in order to convey the signals to the structures. A structure can be coupled to multiple electrical interconnects in order to convey electrical signals along redundant paths through the substrate to the structure, improving reliability should one of the electrical interconnects fail.
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