A method comprising performing an etch process recipe comprised of an endpoint etch process and a timed over-etch process on each of a first plurality of substrates to form at least one opening in each layer of insulating material, determining a duration of the endpoint etch process performed on the first plurality of substrates, determining a duration of the timed over-etch process of the etch process recipe to be performed on a second plurality of substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates, and performing the etch process recipe comprised of the endpoint etch process and the timed over-etch process of the determined duration on the second plurality of semiconducting substrates. A system comprised of an etch tool for forming at least one opening in a layer of insulating material formed above each of a first plurality of semiconducting substrates by performing an etch recipe comprised of an endpoint etch process and a timed over-etch process on each of the substrates, and a controller that determines a duration of the endpoint etch process performed on the first plurality of substrates and determines a duration of the timed over-etch process of the etch recipe to be performed on a second plurality of semiconducting substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates.