Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same

发明授权

US06661714B2 Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same 失效

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专利标题： Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same
申请号： US10147555

申请日： 2002-05-17
公开(公告)号： US06661714B2

公开(公告)日： 2003-12-09
发明人: Jae-goo Lee
申请人： Jae-goo Lee
优先权： KR2001-0038815 20010630
主分类号： G11C700
IPC分类号： G11C700

Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same

摘要：

Integrated circuit devices provide supplemental pull-up drive currents to one or more sense amplifiers therein during operations (e.g., read operations) to sense and amplify differential signals established across inputs of the sense amplifiers. These additional pull-up drive currents are provided to improve the timing characteristics of the sense amplifiers by making them less susceptible to degraded performance that may be caused by insufficiently high internal voltages.

公开/授权文献

US20030002353A1 Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same 公开/授权日：2003-01-02

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