发明授权
- 专利标题: Vertical resonator type surface light emitting semiconductor laser device and fabrication method thereof
- 专利标题(中): 垂直谐振器型面发光半导体激光器件及其制造方法
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申请号: US09718479申请日: 2000-11-24
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公开(公告)号: US06661823B1公开(公告)日: 2003-12-09
- 发明人: Hiromi Otoma , Ryoji Ishii , Jun Sakurai , Yasuaki Miyamoto
- 申请人: Hiromi Otoma , Ryoji Ishii , Jun Sakurai , Yasuaki Miyamoto
- 优先权: JP2000-117973 20000419; JP2000-306804 20001005
- 主分类号: H01S500
- IPC分类号: H01S500
摘要:
A vertical resonator type surface light emitting semiconductor laser device includes a semiconductor substrate having formed thereon a first semiconductor multi-layered film reflection mirror, an active layer, a second semiconductor multi-layered film reflection mirror, and a contact electrode having an opening for emitting laser light. The opening is covered with a protective film for preventing damage during fabrication after the contact electrode has been formed. Or, the protective film is provided on the second semiconductor multi-layered film reflection mirror so that the contact electrode is superimposed on the surface of the protective film, and the opening is formed on the protective layer. In this way, there is provided a vertical resonator type surface light emitting semiconductor laser device having high reliability, capable of stably producing laser light with a low resistance and a high output, which output does not decrease over time.
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