• 专利标题: Methods for fabricating integrated circuit devices using antiparallel diodes to reduce damage during plasma processing
  • 申请号: US10050504
    申请日: 2002-01-16
  • 公开(公告)号: US06664140B2
    公开(公告)日: 2003-12-16
  • 发明人: Ki-Young LeeDong-Gi Choi
  • 申请人: Ki-Young LeeDong-Gi Choi
  • 优先权: KR98-38307 19980916
  • 主分类号: H01L2182
  • IPC分类号: H01L2182
Methods for fabricating integrated circuit devices using antiparallel diodes to reduce damage during plasma processing
摘要:
An integrated circuit includes first and second diodes that are electrically connected to a conductive line in antiparallel, to dissipate both positive and negative charges on the conductive line during plasma processing. The integrated circuit also includes a fuse for disconnecting one of the first and second diodes from the conductive line after the plasma processing, to thereby allow conduction of one of positive and negative charge on the conductive line after the plasma processing. Accordingly, integrated circuits are fabricated by forming a conductive line on an integrated circuit substrate and first and second diodes in the integrated circuit substrate that are electrically connected to the conductive line in antiparallel. Then, plasma processing is performed on the integrated circuit substrate including the conductive line and the first and second diodes, such that the first and second diodes dissipate both positive and negative charges on the conductive line during the plasma processing. Then, one of the first and second diodes is disconnected from the conductive line after performing the plasma processing, to thereby allow conduction of one of positive and negative charge on the conductive line after performing the plasma processing.
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