发明授权
US06664154B1 Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes
有权
在替代栅极集成工艺中使用无定形碳膜作为牺牲层的方法
- 专利标题： Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes
- 专利标题（中）： 在替代栅极集成工艺中使用无定形碳膜作为牺牲层的方法
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申请号： US10185320申请日： 2002-06-28
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公开(公告)号： US06664154B1公开(公告)日： 2003-12-16
- 发明人: Scott A. Bell , Srikanteswara Dakshina-Murthy , Philip A. Fisher , Cyrus E. Tabery
- 申请人： Scott A. Bell , Srikanteswara Dakshina-Murthy , Philip A. Fisher , Cyrus E. Tabery
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
An exemplary embodiment relates to a method of using amorphous carbon in replacement gate integration processes. The method can include depositing an amorphous carbon layer above a substrate, patterning the amorphous carbon layer, depositing a dielectric layer over the patterned amorphous carbon layer, removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer, removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer, and forming a metal gate in the aperture of the dielectric layer.
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