发明授权
- 专利标题： Heterojunction semiconductor device and method of manufacturing
- 专利标题（中）： 异质结半导体器件及其制造方法
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申请号： US09945683申请日： 2001-09-05
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公开(公告)号： US06664574B2公开(公告)日： 2003-12-16
- 发明人: Misbahul Azam , Gary Loechelt , Julio Costa
- 申请人： Misbahul Azam , Gary Loechelt , Julio Costa
- 主分类号： H01L310328
- IPC分类号： H01L310328
摘要：
A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a current (Ic) through a bottom surface (23) of the trench.
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