发明授权
- 专利标题: Method for heat processing of substrate
- 专利标题(中): 基板热处理方法
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申请号: US10382490申请日: 2003-03-07
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公开(公告)号: US06665952B2公开(公告)日: 2003-12-23
- 发明人: Shinji Nagashima
- 申请人: Shinji Nagashima
- 优先权: JP2000-274646 20000911
- 主分类号: F26B700
- IPC分类号: F26B700
摘要:
The present invention relates to a method for subjecting a substrate on which a coating film is formed to heat processing, and the method comprises the steps of heating the substrate to a predetermined high temperature and decreasing the temperature of the substrate to a predetermined low temperature, wherein in the step of decreasing the temperature of the substrate to the low temperature, a first step of decreasing the temperature of the substrate from the predetermined high temperature to a predetermined intermediate temperature and a second step of decreasing the temperature of the substrate from the intermediate temperature to the predetermined low temperature are performed separately. In the present invention, the step of decreasing the temperature of the substrate, which is heated to the high temperature, to the predetermined low temperature is divided into two stages as described above, and hence compared with a case where the temperature of the substrate is rapidly decreased nonstop from the high temperature to the low temperature, the temperature decreasing speed of the substrate is reduced, whereby cracks, a warp, and the like caused by the rapid cooling of the substrate can be prevented.
公开/授权文献
- US20030165787A1 Method and apparatus for heat processing of substrate 公开/授权日:2003-09-04