发明授权
- 专利标题: Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
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申请号: US10394927申请日: 2003-03-19
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公开(公告)号: US06666915B2公开(公告)日: 2003-12-23
- 发明人: Charles Chiun-Chieh Yang , Darrell D. Watkins, Jr.
- 申请人: Charles Chiun-Chieh Yang , Darrell D. Watkins, Jr.
- 主分类号: C03B2300
- IPC分类号: C03B2300
摘要:
This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.