发明授权
- 专利标题: Active matrix substrate and manufacturing method therefor
- 专利标题(中): 有源矩阵基板及其制造方法
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申请号: US09695321申请日: 2000-10-25
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公开(公告)号: US06674093B1公开(公告)日: 2004-01-06
- 发明人: Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
- 申请人: Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
- 优先权: JP11-304683 19991026; JP2000-308262 20001006
- 主分类号: H01L29786
- IPC分类号: H01L29786
摘要:
An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.