A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region. The method further includes introducing a first process gas into the first injection region via a first inlet, and introducing a second process gas into the second injection region via a second inlet. The chamber has a wall encircling the first inlet, such that the wall has a terminal end including the second inlet.