Invention Grant
- Patent Title: Nonvolatile memory structures and access methods
- Patent Title (中): 非易失性存储器结构和访问方法
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Application No.: US10268863Application Date: 2002-10-09
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Publication No.: US06674669B2Publication Date: 2004-01-06
- Inventor: Hsing T. Tuan , Li-Chun Li , Vei-Han Chan
- Applicant: Hsing T. Tuan , Li-Chun Li , Vei-Han Chan
- Main IPC: G11C1134
- IPC: G11C1134

Abstract:
In each row of a nonvolatile memory array, the select gates of all the memory cells are connected together and are used to select a row for memory access. The control gates of each row are also connected together, and the source regions of each row are connected together. Also, the control gates of plural rows are connected together, and the source regions of plural rows are connected together, but if the source regions of two rows are connected together, then their control gates are not connected together. If one of the two rows is being accessed but the other one of the two rows is not being accessed, their control gates are driven to different voltages, reducing the probability of a punch-through in the non-accessed row.
Public/Granted literature
- US20030067808A1 Nonvolatile memory structures and access methods Public/Granted day:2003-04-10
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