发明授权
- 专利标题: Nonvolatile memory structures and access methods
- 专利标题(中): 非易失性存储器结构和访问方法
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申请号: US10268863申请日: 2002-10-09
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公开(公告)号: US06674669B2公开(公告)日: 2004-01-06
- 发明人: Hsing T. Tuan , Li-Chun Li , Vei-Han Chan
- 申请人: Hsing T. Tuan , Li-Chun Li , Vei-Han Chan
- 主分类号: G11C1134
- IPC分类号: G11C1134
摘要:
In each row of a nonvolatile memory array, the select gates of all the memory cells are connected together and are used to select a row for memory access. The control gates of each row are also connected together, and the source regions of each row are connected together. Also, the control gates of plural rows are connected together, and the source regions of plural rows are connected together, but if the source regions of two rows are connected together, then their control gates are not connected together. If one of the two rows is being accessed but the other one of the two rows is not being accessed, their control gates are driven to different voltages, reducing the probability of a punch-through in the non-accessed row.
公开/授权文献
- US20030067808A1 Nonvolatile memory structures and access methods 公开/授权日:2003-04-10
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