发明授权
US06674679B1 Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation 有权
用于具有等电位隔离的MRAM的多偏压点感测的可调电流模式差分放大器

  • 专利标题: Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation
  • 专利标题(中): 用于具有等电位隔离的MRAM的多偏压点感测的可调电流模式差分放大器
  • 申请号: US10262051
    申请日: 2002-10-01
  • 公开(公告)号: US06674679B1
    公开(公告)日: 2004-01-06
  • 发明人: Frederick A. PernerAnthony P. Holden
  • 申请人: Frederick A. PernerAnthony P. Holden
  • 主分类号: G11C706
  • IPC分类号: G11C706
Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation
摘要:
An adjustable current mode differential sense amplifier is disposed to be in communication with a selected memory cell and a reference cell having a predetermined value. The amplifier is able to sense current and voltage changes associated with the selected memory cell and compare them to current and voltage changes associated with the reference cell. The operating point of the sensing amplifier may be changed by modifying threshold voltages related to the back gate bias applied to selected transistors in the amplifier. This adjusting capability enables currents or voltages of the sense amplifier to be set when a first bias voltage is applied to a selected memory cell in order to maximize the sensitivity of the amplifier. When a second bias voltage is applied to the memory and reference cells in order to determine the memory cell value, the amplifier is able to sense slight changes in the currents or voltages associated with the selected memory cell and the reference cell and compare them to determine the state of the memory cell. This increased sensitivity enables the amplifier to have a substantially increased dynamic range without introducing components that might adversely affect the memory circuitry parameters. The memory cell array being sensed has equi-potential isolation for all unselected memory cells, thereby minimizing sneak currents through the unselected memory cells.
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