Invention Grant
- Patent Title: Carbon doped oxide deposition
- Patent Title (中): 碳掺杂氧化物沉积
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Application No.: US09972228Application Date: 2001-10-05
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Publication No.: US06677253B2Publication Date: 2004-01-13
- Inventor: Ebrahim Andideh , Kevin L. Peterson , Jeffery D. Bielefeld
- Applicant: Ebrahim Andideh , Kevin L. Peterson , Jeffery D. Bielefeld
- Main IPC: H01L2131
- IPC: H01L2131

Abstract:
A method for carbon doped oxide (CDO) deposition is described. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.
Public/Granted literature
- US20030077921A1 Carbon doped oxide deposition Public/Granted day:2003-04-24
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