Intralevel decoupling capacitor, method of manufacture and testing circuit of the same

发明授权

US06677637B2 Intralevel decoupling capacitor, method of manufacture and testing circuit of the same 有权

标题翻译：内部去耦电容器，制造和测试电路的方法

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专利标题： Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
专利标题（中）： 内部去耦电容器，制造和测试电路的方法
申请号： US09330803

申请日： 1999-06-11
公开(公告)号： US06677637B2

公开(公告)日： 2004-01-13
发明人: Kerry Bernstein , John A. Bracchitta , William J. Cote , Tak H. Ning , Wilbur D. Pricer
申请人： Kerry Bernstein , John A. Bracchitta , William J. Cote , Tak H. Ning , Wilbur D. Pricer
主分类号： H01C2992
IPC分类号： H01C2992

Intralevel decoupling capacitor, method of manufacture and testing circuit of the same

摘要：

A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns on the surface of the first low dielectric insulator in a single interconnect plane. A high dielectric constant material may be provided between the two patterns. A circuit for testing a plurality of these capacitors is also provided which includes a charge monitoring circuit, a coupling circuit and a control circuit.

摘要（中）：

为半导体器件提供去耦电容器，并且可以包括在单个互连平面中在第一低介电绝缘体的表面上形成至少两个交叉指示图案的第一低介电绝缘体层和低电阻导体。可以在两个图案之间提供高介电常数材料。还提供了用于测试多个这些电容器的电路，其包括充电监视电路，耦合电路和控制电路。

公开/授权文献

US20020081832A1 INTRALEVEL DECOUPLING CAPACITOR, METHOD OF MANUFACTURE AND TESTING CIRCUIT OF THE SAME 公开/授权日：2002-06-27

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