Invention Grant
US06680233B2 Semiconductor device formed with disposable spacer and liner using high-K material and method of fabrication
有权
使用高K材料和制造方法形成具有一次性间隔件和衬垫的半导体器件
- Patent Title: Semiconductor device formed with disposable spacer and liner using high-K material and method of fabrication
- Patent Title (中): 使用高K材料和制造方法形成具有一次性间隔件和衬垫的半导体器件
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Application No.: US09974167Application Date: 2001-10-09
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Publication No.: US06680233B2Publication Date: 2004-01-20
- Inventor: Bin Yu , Qi Xiang , HaiHong Wang
- Applicant: Bin Yu , Qi Xiang , HaiHong Wang
- Main IPC: H01L21336
- IPC: H01L21336
Abstract:
A semiconductor device and method of manufacture. A liner composed of a high-K material having a relative permittivity of greater than 10 is formed adjacent at least the sidewalls of a gate. Sidewall spacers are formed adjacent the gate and spaced apart from the gate by the liner. The liner can be removed using an etch process that has substantially no reaction with a gate dielectric of the gate.
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