发明授权
- 专利标题： Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters
- 专利标题（中）： 通过改变化学气相沉积参数化学气相沉积钌的方法
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申请号： US10080000申请日： 2002-02-21
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公开(公告)号： US06680251B2公开(公告)日： 2004-01-20
- 发明人: Seok-jun Won , Cha-young Yoo , Sung-tae Kim , Young-wook Park , Yun-jung Lee , Soon-yeon Park
- 申请人： Seok-jun Won , Cha-young Yoo , Sung-tae Kim , Young-wook Park , Yun-jung Lee , Soon-yeon Park
- 优先权： KR2001-15001 20010322
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.