发明授权
- 专利标题: Method for producing a semiconductor device
- 专利标题(中): 半导体器件的制造方法
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申请号: US09943140申请日: 2001-08-31
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公开(公告)号: US06686107B2公开(公告)日: 2004-02-03
- 发明人: Shunichi Matsumoto , Yasuhiro Yoshitake , Takeshi Kato , Norio Hasegawa
- 申请人: Shunichi Matsumoto , Yasuhiro Yoshitake , Takeshi Kato , Norio Hasegawa
- 优先权: JP2000-396903 20001225
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
A relative positional error is caused between an alignment mark and a device area on a mask due to an error inherent to the mask drawing apparatus, which causes an alignment error in the device area even when alignment upon exposure has no problem. Then, according to this invention, a relative positional error between the alignment mark and the device area on the mask is measured in an off line manner, the result of measurement is set upon exposure as a correction value to an exposure device thereby correcting the mask drawing error to reduce alignment errors in the device area.
公开/授权文献
- US20020081506A1 Method for producing a semiconductor device 公开/授权日:2002-06-27
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