发明授权
US06688020B2 Substrate processing apparatus 有权
基板加工装置

  • 专利标题: Substrate processing apparatus
  • 专利标题(中): 基板加工装置
  • 申请号: US09839430
    申请日: 2001-04-20
  • 公开(公告)号: US06688020B2
    公开(公告)日: 2004-02-10
  • 发明人: Takayuki ToshimaTadashi Iino
  • 申请人: Takayuki ToshimaTadashi Iino
  • 优先权: JP2000-120842 20000421
  • 主分类号: F26B1310
  • IPC分类号: F26B1310
Substrate processing apparatus
摘要:
A substrate processing apparatus and method which can prevent accidents in advance so as to ensure safety against interruption of operations of the apparatus and leakage of processing substances. In a substrate processing method in which wafers W are processed are processed by feeding an ozone gas 5 to the wafers W loaded in a processing vessel 2 while an interior atmosphere in the processing vessel is being exhausted to be passed through an ozone killer 10, the ozone gas 5 is fed under the conditions that the processing vessel 2 is tightly closed, and the ozone killer in its normal state. When the processing is interrupted, an interior atmosphere in the processing vessel 2 is forcedly exhausted. When the gas leaks, the interior atmosphere and a peripheral atmosphere of the processing vessel 2 are forcedly exhausted while the feed of the ozone gas 5 is paused. The processing gas is fed under a condition that the processing vessel is tightly closed, and the post-treatment of the exhausted interior atmosphere is normally carried out.
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