Invention Grant
US06692569B2 A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS
有权
A-SITE-AND /或B-SITE修饰的PBZRTIO3材料和（PB，SR，CA，BA，MG）（ZR，TI，NB，TA）O3薄膜在电磁随机存取存储器和高性能薄膜微处理器中的应用
- Patent Title: A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS
- Patent Title (中): A-SITE-AND /或B-SITE修饰的PBZRTIO3材料和（PB，SR，CA，BA，MG）（ZR，TI，NB，TA）O3薄膜在电磁随机存取存储器和高性能薄膜微处理器中的应用
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Application No.: US09939906Application Date: 2001-08-27
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Publication No.: US06692569B2Publication Date: 2004-02-17
- Inventor: Jeffrey F. Roeder , Ing-Shin Chen , Steven Bilodeau , Thomas H. Baum
- Applicant: Jeffrey F. Roeder , Ing-Shin Chen , Steven Bilodeau , Thomas H. Baum
- Main IPC: C30B2504
- IPC: C30B2504
Abstract:
A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.
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