发明授权
- 专利标题： Ion implantation method and ion implantation equipment
- 专利标题（中）： 离子注入法和离子注入设备
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申请号： US10079490申请日： 2002-02-22
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公开(公告)号： US06693023B2公开(公告)日： 2004-02-17
- 发明人: Atsushi Murakoshi , Kyoichi Suguro
- 申请人： Atsushi Murakoshi , Kyoichi Suguro
- 优先权： JP11-042730 19990222
- 主分类号： H01L2104
- IPC分类号： H01L2104
摘要：
In an ion implantation method using an ion implantation equipment having an extraction electrode and a post accelerator, ion is uniformly implanted into a shallow region from the surface of a sample by setting an applied volt. of the post accelerator higher than an applied volt. of the extraction electrode.
公开/授权文献
- US20020130271A1 Ion implantation method and ion implantation equipment 公开/授权日：2002-09-19
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