发明授权
- 专利标题: Method of forming a contact structure having an anchoring portion
- 专利标题(中): 形成具有锚定部分的接触结构的方法
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申请号: US09892362申请日: 2001-06-27
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公开(公告)号: US06693032B2公开(公告)日: 2004-02-17
- 发明人: Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
- 申请人: Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
- 优先权: KR1994-34250 19991214
- 主分类号: H01L213205
- IPC分类号: H01L213205
摘要:
A semiconductor device adopting an interlayer contact structure between upper and lower conductive layers and a method of manufacturing the semiconductor device adopting the structure are provided. The lower conductive layer includes a first conductive layer and a first silicide layer stacked together. The upper conductive layer includes a second conductive layer doped with impurities and a second silicide layer stacked together. In the interlayer contact structure, the first and second conductive layers are in direct contact with each other. This decreases the contact resistance between the two conductive layers and improves the electrical properties of the device.