A bit line voltage regulation circuit achieves uniform program features and precise cell distribution by providing a high voltage to a bit line regardless of a cell state. For this purpose, the regulation circuit includes a boosting unit for generating the high voltage, a switching unit, connected between the boosting unit and the bit line of a memory cell array, for transferring the high voltage to the bit line and an amplifying unit, for detecting a voltage drop at a detection node on the bit line caused by resistance on the bit line, amplifying the detected voltage drop to produce an amplified voltage driving the switching unit.