An FAMOS memory includes memory cells, with each memory cell including an insulated gate transistor, and a first access transistor having a drain connected to a source of the insulated gate transistor. The FAMOS memory also includes an insulation transistor having a drain and a source respectively connected to the source of the insulated gate transistors of two adjacent cells of a same row. Each insulated gate transistor has a ring structure, and a ladder-shaped separation region insulates the cells of the same row.