发明授权
- 专利标题: Chemical mechanical polishing endpoinat detection
- 专利标题(中): 化学机械抛光endpoinat检测
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申请号: US10005658申请日: 2001-11-07
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公开(公告)号: US06709314B2公开(公告)日: 2004-03-23
- 发明人: Tony S. Kaushal , Chuong Quang Dam , Yongqi Hu
- 申请人: Tony S. Kaushal , Chuong Quang Dam , Yongqi Hu
- 主分类号: B24B4900
- IPC分类号: B24B4900
摘要:
Endpoint of a chemical mechanical polishing process is detected by monitoring acoustical emissions produced by contact between a polishing pad and a wafer. The acoustic information is resolved into a frequency spectrum utilizing techniques such as fast Fourier transformation. Characteristic changes in frequency spectra of the acoustic emissions reveal transition in polishing between different material layers. CMP endpoint indicated by a change in the acoustic frequency spectrum is validated by correlation with other sensed properties, including but not limited to time-based changes in amplitude of acoustic emissions, frictional coefficient, capacitance, and/or resistance. CMP endpoint revealed by a change in acoustic frequency spectrum can also be validated by comparison with characteristic frequency spectra obtained at endpoints or polishing transitions of prior operational runs.
公开/授权文献
- US20030087586A1 Chemical mechanical polishing endpoinat detection 公开/授权日:2003-05-08