发明授权
- 专利标题: Semiconductor laser device
- 专利标题(中): 半导体激光器件
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申请号: US10120566申请日: 2002-04-11
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公开(公告)号: US06711197B2公开(公告)日: 2004-03-23
- 发明人: Tsuyoshi Tojo , Shiro Uchida , Satoru Kijima
- 申请人: Tsuyoshi Tojo , Shiro Uchida , Satoru Kijima
- 优先权: JPP2001-114268 20010412
- 主分类号: H01S500
- IPC分类号: H01S500
摘要:
Disclosed is a nitride based III-V group compound semiconductor laser device of ridge waveguide type with an oscillation wavelength of about 410 nm which has a low driving voltage, a high half-width value &thgr;// of a FFP in a direction horizontal to a hetero interface, and a high kink level (i.e., good light output-injected current characteristics over the high-output range). This laser device is similar in structure to the related-art semiconductor laser device except for the current constricting layer formed in a ridge. It has a stacked film composed of an SiO2 film (600 Å thick) and an amorphous Si film (300 Å thick) which are formed on the SiO2 film by vapor deposition. The stacked film covers both sides of the ridge and a p-AlGaN cladding layer extending sideward from the base of the ridge. The SiO2 film and Si film have respective thicknesses which are established such that the absorption coefficient of fundamental horizontal lateral mode is larger than the absorption coefficient of primary horizontal lateral mode. This structure results in a higher kink level, while suppressing the high-order horizontal lateral mode, a larger effective refractive index difference &Dgr;n, and a larger value of &thgr;// without the necessity for reducing the ridge width.
公开/授权文献
- US20020159494A1 Semiconductor laser device 公开/授权日:2002-10-31