发明授权
- 专利标题: Isolated photodiode
- 专利标题(中): 隔离光电二极管
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申请号: US10044974申请日: 2002-01-15
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公开(公告)号: US06713796B1公开(公告)日: 2004-03-30
- 发明人: Eric C. Fox
- 申请人: Eric C. Fox
- 主分类号: H01L31062
- IPC分类号: H01L31062
摘要:
A sensor formed in a substrate of a first conductivity type in a first concentration to express a first intrinsic potential includes CMOS circuitry to control the sensor, a first well of the first conductivity type in a second concentration (greater than the first concentration) formed in the substrate to express a second intrinsic potential, and a photodiode region of a second conductivity type formed in the first well. The first and second intrinsic potentials induce a field between the substrate and the first well that repels photo generated charge from drifting from the substrate into the first well. Alternatively, a sensor formed in a substrate of a first conductivity type includes CMOS circuitry to control the sensor, a first well of a second conductivity type formed in the substrate, a second well of the first conductivity type formed in the first well, and a photodiode region of the second conductivity type formed in the second well.