Invention Grant
US06713969B2 Method and apparatus for determination and control of plasma state
失效
用于测定和控制等离子体状态的方法和装置
- Patent Title: Method and apparatus for determination and control of plasma state
- Patent Title (中): 用于测定和控制等离子体状态的方法和装置
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Application No.: US10355173Application Date: 2003-01-31
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Publication No.: US06713969B2Publication Date: 2004-03-30
- Inventor: Murray Sirkis , Wayne L. Johnson , Andrej Mitrovic , Eric J. Strang
- Applicant: Murray Sirkis , Wayne L. Johnson , Andrej Mitrovic , Eric J. Strang
- Main IPC: H01J724
- IPC: H01J724

Abstract:
A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.
Public/Granted literature
- US20030141822A1 Method and apparatus for determination and control of plasma state Public/Granted day:2003-07-31
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