Invention Grant
US06716690B1 Uniformly doped source/drain junction in a double-gate MOSFET
有权
在双栅极MOSFET中均匀掺杂的源极/漏极结
- Patent Title: Uniformly doped source/drain junction in a double-gate MOSFET
- Patent Title (中): 在双栅极MOSFET中均匀掺杂的源极/漏极结
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Application No.: US10385692Application Date: 2003-03-12
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Publication No.: US06716690B1Publication Date: 2004-04-06
- Inventor: Haihong Wang , Judy Xilin An , Bin Yu
- Applicant: Haihong Wang , Judy Xilin An , Bin Yu
- Main IPC: H01L21336
- IPC: H01L21336
Abstract:
Multiple dopant implantations are performed on a FinFET device to thereby distribute the dopant in a substantially uniform manner along a vertical depth of the FinFET in the source/drain junction. Each of the multiple implantations may be performed at different tilt angles.
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