发明授权
- 专利标题： Method of forming a bottle-shaped trench in a semiconductor substrate
- 专利标题（中）： 在半导体衬底中形成瓶形沟槽的方法
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申请号： US10206733申请日： 2002-07-26
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公开(公告)号： US06716696B2公开(公告)日： 2004-04-06
- 发明人: Yi-Nan Chen , Hsien-Wen Liu
- 申请人： Yi-Nan Chen , Hsien-Wen Liu
- 优先权： TW91101347A 20020128
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A method of forming a bottle-shaped trench in a semiconductor substrate. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. An oxide film is then formed on the top portion of the trench. Next, the semiconductor substrate is etched through the bottom portion of the trench with a diluted ammonia solution as the etchant to form a bottle-shaped trench followed by removal of the oxide film.
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