发明授权
- 专利标题： Pattern formation method
- 专利标题（中）： 图案形成方法
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申请号： US10339602申请日： 2003-01-10
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公开(公告)号： US06716730B2公开(公告)日： 2004-04-06
- 发明人: Masayuki Endo , Masaru Sasago
- 申请人： Masayuki Endo , Masaru Sasago
- 优先权： JP2002-006959 20020116
- 主分类号： H01L2122
- IPC分类号： H01L2122
摘要：
After pre-baking a resist film, a solvent included in the resist film is vaporized. After vaporizing the solvent included in the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light in vacuum. The resist film is developed after the pattern exposure, so as to form a resist pattern.
公开/授权文献
- US20030143824A1 Pattern formation method 公开/授权日：2003-07-31
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